在半导体器件中,由于硅表面SiO2薄膜中钠的沾污,严重地影响着器件的稳定性、可靠性及成品率.对于MOS器件,这一影响就更为突出,因此深为人们关注.究竟如何有效地除去氧化膜中的Na+,提高器件的可靠性和电学稳定性,这已成为国内外研究的重要课题. 已有大量的实验证实,在1150℃下的 In semiconductor devices, due to the contamination of sodium in the SiO2 film on the silicon surface, the stability, reliability and yield of the device are seriously affected, and this effect is even more prominent for MOS devices and is therefore of great concern. How to effectively remove the Na + in the oxide film and improve the reliability and electrical stability of the device has become an important issue at home and abroad.A large number of experiments have shown that at 1150 ℃