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微腔效应可以提高自发辐射速率,从而起到有效的改善响应调制速率的作用.然而,对于1.3μm GaAs/InAs量子点光子晶体激光器而言,调制速率还会受到复杂的载流子动力学以及更近的空穴能级间隔的影响.因此基于全路径载流子弛豫动力学方程,计算并讨论了腔品质因子(Q)对于阈值和响应调制特性的影响.计算结果表明,高的Q值能够明显改善量子点光子晶体激光器的阈值,但是同时快速增长的光子寿命会导致调制带宽的恶化.所以,存在一个优化的Q值(2500)可以获得超过100 GHz的调制带宽,而当Q值为7 000时,对应的能量传输损耗最低.因此,在量子点光子晶体纳腔激光器的设计中,更全面的考虑各方面的因素对器件的性能的影响,对于获得高速调制低功耗的量子点激光器器件是十分有意义的.
The microcavity effect can increase spontaneous emission rate, which can effectively improve the response modulation rate.However, for the 1.3μm GaAs / InAs quantum dot photonic crystal lasers, the modulation rate will be subject to complex carrier dynamics and The effect of the cavity quality factor (Q) on the threshold and response modulation characteristics is calculated and discussed based on the full-path carrier relaxation kinetics equation.The calculated results show that the high Q Values can significantly improve the threshold of quantum dot photonic crystal lasers but at the same time the rapidly growing photon lifetime leads to a deterioration of the modulation bandwidth.So there is an optimized Q value of 2500 for modulation bandwidths above 100 GHz and for Q values The corresponding energy transmission loss is the lowest at 7 000. Therefore, in the design of quantum dot photonic crystal nanocavity lasers, more comprehensive consideration of various factors on the performance of the device, for the realization of high-speed modulation of low-power quantum Point laser device is very meaningful.