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对ＧＡＴ结构晶体管中栅的引入和栅参数改变对击穿电压的影响进行了定量计算，报告了计算的结果，以及对结果的理论分析。计算采用数值分析方法，所用软件为ＰＩＳＣＥＳ．计算结果表明，栅的引入可以显著提高高速功率开关晶体管的击穿电压ＢＶＣＥＯ；栅区浓度越高，栅区结深越深，击穿电压越高；栅间距是提高击穿的关键因素，存在一个最佳值。本计算结果为高频高压功率晶体管的优化设计提供了有力的依据。
The influence of gate introduction and gate parameter change on breakdown voltage in GAT structure transistor is quantitatively calculated, the calculation results are reported, and the theoretical analysis of the results is reported. Calculation using numerical analysis, the software used is PISCES. The results show that the introduction of gate can significantly improve the breakdown voltage BVCEO of high-speed power switch transistor. The higher the gate concentration is, the deeper the gate junction is and the higher the breakdown voltage is. The gate spacing is the key factor to improve the breakdown. An optimal value. The calculation results provide a strong basis for the optimal design of high frequency and high voltage power transistors.