金刚石由于其独特的物理和化学性质,使其成为电极材料的首选。通过热丝化学气相沉积(HFCVD)技术,在钽片上制备了p型掺硼金刚石(BDD)薄膜电极。通过掺入硼元素在金刚石带隙间引入杂质能级,改变了电极的电学特性,同时硼替位碳原子改变了金刚石的结构。通过原子力显微镜(AFM)和循环伏安法(CV)分析讨论了硼掺杂浓度对BDD电极的表面形貌和电化学特性的影响。结果表明,优化硼掺杂浓度可以使薄膜有好的致密性和稳定的电化学性质。硼掺杂浓度优化后制备的BDD电极电化学窗口可达3.8 V。 Due to its unique physical and chemical properties, diamond makes it the electrode of choice. A p-type boron doped diamond (BDD) thin film electrode was fabricated on tantalum wafer by hot filament chemical vapor deposition (HFCVD). The incorporation of boron into the bandgap of diamond introduces an impurity level that changes the electrical properties of the electrode, while the boron substitutional carbon atoms change the structure of the diamond. The effects of boron doping concentration on the surface morphology and electrochemical properties of BDD electrodes were discussed by atomic force microscopy (AFM) and cyclic voltammetry (CV) analysis. The results show that optimizing the boron concentration can make the film have good compactness and stable electrochemical properties. The electrochemical window of BDD electrode prepared by optimized boron doping concentration can reach 3.8V.