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基于GaN转移电子器件最基本的工作模式——畴渡越时间模式,计算了GaN转移电子器件的理想最高振荡频率,得到该类型微波转移电子器件的最高振荡频率可达4.7THz,接近GaAs转移电子器件最高振荡频率(0.6THz)的8倍.从理论上计算出GaN转移电子器件的理想最大输出功率,结果表明GaN转移电子器件在功率输出方面具有很大优势.最后还讨论了GaN转移电子器件在畴渡越时间模式下,能够产生稳定Gunn振荡的两个基本条件,即电子浓度N与器件有源区长度L乘积要大于该器件的设计标准((NL)0=6.3×1012cm-2)及有源区的掺杂浓度N要小于临界掺杂浓度Ncrit(3.2×1017cm-3).本工作揭示出GaN转移电子器件在高频率和大功率输出方面都具有重要优势,作为大功率THz微波信号源将具有广阔的应用前景.
Based on the time-domain transition mode of GaN transfer electronics, the ideal maximum oscillation frequency of GaN transfer electronics is calculated. The maximum oscillation frequency of this type of microwave transfer electronics can reach 4.7 THz, which is close to that of GaAs transfer electrons The maximum oscillation frequency of the device (0.6THz) is eight times.The theoretical maximum output power of the GaN transfer electronic device is calculated theoretically.The results show that the GaN transfer electronic device has a great advantage in power output.Finally, the GaN transfer electronic device Under the transit time mode, two basic conditions that can produce stable Gunn oscillation are that the product of the electron concentration N and the device active region length L is greater than the design standard of the device ((NL) 0 = 6.3 × 1012cm-2) And the active region doping concentration N is less than the critical doping concentration Ncrit (3.2 × 1017cm-3) .This work reveals that GaN transfer electronic devices have important advantages in high frequency and high power output, as a high-power THz microwave The signal source will have broad application prospects.