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利用由射线法导出的两段式半导体激光器（２ＳＬＤ）的端面输出谱的表达式，研究了两电极半导体激光器（２ＥＬＤ）和外腔式半导体激光器（ＥＣＬＤ）。结果表明：２ＥＬＤ的振荡波长并非始终都与腔的共振波长相同；在ＥＣＬＤ上实现准连续调谐的关键是使激光器能被调谐在二极管的反共振波长处振荡，因此，我们求得了ＥＣＬＤ实现反共振激射的阈值载流子数密度以及对界面反射率的要求的表达式。
Two-electrode semiconductor lasers (2ELD) and external cavity semiconductor lasers (ECLDs) were investigated using the expression of the end-face output spectrum of a two-stage semiconductor laser (2SLD) derived by the ray method. The results show that the oscillation wavelength of 2ELD is not always the same as the resonant wavelength of the cavity. The key to quasi-continuous tuning in ECLD is that the laser can be tuned to oscillate at the anti-resonant wavelength of the diode. Therefore, we obtain the ECLD to achieve anti-resonance The lasing threshold carrier density and the interface reflectivity requirements expression.