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(ZrO2)x(SiO2)1-x (Zr-Si-O) films with different compositions were deposited on p-Si(100) substrates by using pulsed laser deposition technique. X-ray photoelectron spectra (XPS) showed that these films remained amorphous after annealing at 800℃ with RTA process in N2 for 60 s. The XPS spectra indi- cated that Zr-Si-O films with x=0.5 suffered no obvious phase separation after annealing at 800℃, and no interface layer was formed between Zr-Si-O film and Si substrate. While Zr-Si-O films with x >0.5 suffered phase separation to precipitate ZrO2 after annealing under the same condition, and SiO2 was formed at the interface. To get a good interface between Zr-Si-O films and Si substrate, Zr-Si-O films with bi-layer structure (ZrO2)0.7(SiO2)0.3/(ZrO2)0.5(SiO2)0.5/Si was deposited. The electrical properties showed that the bi-layer Zr-Si-O film is of the lowest equivalent oxide thickness and good interface with Si substrate.
(ZrO2) x (SiO2) 1-x (Zr-Si-O) films with different compositions were deposited on p-Si (100) substrates by using pulsed laser deposition technique. X-ray photoelectron spectra The XPS spectra indi-cated that Zr-Si-O films with x = 0.5 suffered no obvious phase separation after annealing at 800 ° C, and no interface layer was formed Between Zr-Si-O film and Si substrate. While Zr-Si-O films with x> 0.5 suffered phase separation to precipitate ZrO2 after annealing under the same condition, and SiO2 was formed at the interface. Si-O films and Si substrate, Zr-Si-O films with bi-layer structure (ZrO2) 0.7 (SiO2) 0.3 / (ZrO2) 0.5 (SiO2) 0.5 / Si was deposited. The electrical properties showed that the bi- layer Zr-Si-O film is of the lowest equivalent oxide thickness and good interface with Si substrate.