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报道了基于Ge衬底分子束外延碲镉汞原位As掺杂材料的研究结果,进行了As掺杂碲镉汞薄膜生长的温度控制研究;分析了As束流对材料晶体质量的影响,结合SIMS测试技术得到了As杂质掺杂浓度与束源炉加热温度的关系;并利用傅里叶红外光谱仪、X射线双晶衍射、EPD检测等手段对晶体质量进行了分析表征,结果显示利用MBE方法可以生长出晶体质量良好、缺陷密度低的碲镉汞薄膜;进一步研究了As杂质的激活退火工艺及不同退火条件对材料电学参数的影响。
This paper reports the results of the Ge-based molecular beam epitaxy HgCdTe in-situ As doping, and studies the temperature control of As doping HgCdTe thin films. The effect of As beam on the crystal quality of the material is also analyzed. The relationship between As doping concentration and heating temperature of beam source furnace was obtained by SIMS test. The crystal quality was characterized by Fourier transform infrared spectroscopy, X-ray double crystal diffraction and EPD. The results showed that the MBE method HgCdTe thin films with good crystal quality and low defect density can be grown. The effects of As annealing process and As annealing conditions on the electrical parameters were further studied.