一、前言我所研制的用于77—Ⅱ型微计算机的PPR电路(16位并行输入并行输出接口电路),在可靠性试验中曾出现过因漏电而大量失效,高达60%,经试验分析证实,漏电流由阈值电压V_T 漂移引起。而V_T 漂移的原因是场氧化物有较多钠离子Na~+ 沾污(并不是常见的栅氧化物Na~+ 沾污),说明场氧化物的Na~+ 沾污同样会降低MOS 电路的可靠性。 I. INTRODUCTION The PPR circuit (16-bit parallel input parallel output interface circuit) developed by our company for the 77-II type micro-computer has undergone a large number of failures due to leakage in the reliability test up to 60% It is confirmed that the leakage current is caused by the drift of the threshold voltage V_T. The reason for the V_T drift is that there is more Na + in the field oxide than the Na + in the gate oxide, which implies that the Na + reliability.