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采用金属有机化合物气相淀积（ Ｍ Ｏ Ｃ Ｖ Ｄ）方法成功地研制了具有两对梯度折射率（ Ｇ Ｒ Ｉ Ｎ）异质结结构的 Ｉｎ Ｇａ Ａｓ／ Ａｌ Ｇａ Ａｓ 应变双量子阱激光器。该激光器的波长为 ９７０～９８２ ｎｍ ，室温连续工作阈值电流密度为１４０ Ａ／ｃｍ ２， 工作在０．９ Ａ 时单面连续输出光功率为５２０ ｍ Ｗ ， 工作在２．０ Ａ 时， 连续输出光功率为 １．４９ Ｗ ， 最高功率可达 ２．４ Ｗ 。微分量子效率高达０．８３ Ｗ ／ Ａ。
The In Ga As / Al GaAs strained double quantum well laser with two pairs of gradient refractive index (G R I N) heterojunction structures has been successfully fabricated by metal organic compound vapor deposition (MOCVD). The laser has a wavelength of 970 nm to 982 nm, a continuous threshold current density of 140 A / cm 2 at room temperature and a continuous single-sided output power of 520 mW at 0.9 A. When operating at 2.0 A, The output optical power is 1.49 W and the maximum power is 2.4 W. Differential quantum efficiency up to 0.83 W / A.