高密度LSI研制的主要问题在于解决高速度和高集成度。为实现这个目的,在改进电路结构同时的另一个重要问题是改进工艺以实现图形的微细化。为使图形的微细化,不用说要提高照相制版技术,要改进抗蚀剂和掩模对位的光学系统,还要确立高精度掩模制作技术,最后,配合以高精度腐蚀技术,才能实现。 The main problem with high-density LSI development is the solution to high speed and high integration. To achieve this goal, another important issue in improving the circuit structure is to improve the process to achieve the miniaturization of the graphics. In order to miniaturize the graphics, it goes without saying that to improve the photolithography technology, to improve the optical system resist and mask alignment, but also to establish high-precision mask making technology, and finally, with high-precision etching technology to achieve .