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以水稻品种‘Italica carolina’为试验材料,分别生长在含有As~(Ⅲ)和As~Ⅴ介质中3 d,采用营养液培养方法和亚细胞组分分级技术,研究了不同硅/砷比对水稻剑叶和根中砷亚细胞分布特征的影响。结果显示,水稻无论生长在As~(Ⅲ)或As~Ⅴ条件下,根系和剑叶亚细胞不同组分中砷含量顺序为:胞液>细胞壁>细胞器。从水稻根中砷的亚细胞分布来看,As~(Ⅲ)培养条件下加硅明显降低了根系砷在亚细胞组分中的分布,且硅/砷比10:1时根细胞器和胞液中砷的含量最低;而在As~Ⅴ培养条件下,仅硅/砷比200:1处理显著降低了根系胞液组分中的砷含量(P<0.05)。从水稻剑叶中砷的亚细胞分布来看,As~(Ⅲ)培养条件下硅/砷比10:1显著降低了胞液和细胞壁中的砷含量(P<0.05)且达到了最低值,而细胞器中砷含量在硅/砷比1:1时达到最低;As~Ⅴ培养条件下,不同硅/砷比并没有明显影响砷在剑叶中的亚细胞分布。
The rice variety ’Italica carolina’ was grown in medium containing As ~ (Ⅲ) and As ~ Ⅴ for 3 days respectively. The nutrient solution culture and subcellular fractionation were used to study the effects of different silicon / arsenic ratios Effect of Distribution of As on Arsenic in Flag Leaves and Roots of Rice. The results showed that the order of arsenic content in different components of root and leaf sub-cells was as follows: cytosol> cell wall> organelle under the conditions of As ~ (Ⅲ) or As ~ Ⅴ. From the aspect of subcellular distribution of arsenic in rice roots, the distribution of arsenic in the subcellular fractions of As (Ⅲ) However, under As ~ V culture conditions, only the Si / As ratio of 200: 1 significantly reduced the content of arsenic in root cytosol (P <0.05). From the subcellular distribution of arsenic in the flag leaves of rice, the arsenic content in the cytosol and the cell wall was significantly decreased by the Si / A ratio of 10: 1 under As ~ (Ⅲ) culture condition (P <0.05) While the content of arsenic in organelles reached the lowest when the ratio of silicon to arsenic was 1: 1. Under the conditions of As ~ V, different ratios of Si / A did not affect the subcellular distribution of arsenic in the flag leaves.