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报道了非对称ＧａＡｓ／ＡｌＡｓ双势垒结构（ＤＢＳ）中的Γ－Ｘ－Γ磁隧穿振荡现象，用磁场倒数周期求得ＡｌＡｓ层中Ｘ谷和ＧａＡｓ层中Γ谷之间的能带不连续值与通常公认值符合很好．良好的振荡特性可作为定量研究Γ－Ｘ耦合强度的灵敏的实验办法
The phenomenon of Γ-X-Γ magnetic tunneling in asymmetric GaAs / AlAs double-barrier structures (DBS) is reported. The energy band between the X-valley in the AlAs layer and the Γ-valley in the GaAs layer Continuous values agree well with accepted values. Good oscillation characteristics can be used as a sensitive experimental method for quantitative study of Γ-X coupling strength