本文报道用高位错密度N_D=10~6～10~(10)废次复拉单晶硅制作太阳电池,研究了位错对太阳电池性能的影响。用损伤吸杂、重掺磷及氢化处理可以消除高位错密度对太阳电池特性的影响。实验结果表明,经上述方法处理,以高位错密度单晶硅制备的太阳电池,其转换效率达到了常规复拉单晶硅材料制备电池的水平,而所采用的方法并不增加工艺复杂性,从而降低了电池对原材料的要求。 In this paper, solar cells were fabricated from waste Fura Si monocrystalline silicon with high dislocation density N_D = 10 ~ 6 ~ 10 ~ (10). The effect of dislocation on the performance of solar cells was investigated. The effects of high dislocation density on the characteristics of solar cells can be eliminated by damage absorption, heavy phosphorus and hydrogenation. The experimental results show that the solar cells prepared by the above method have high conversion efficiency to the level of the conventional Farah single crystal silicon battery, and the method used does not increase the process complexity, Thus reducing the battery of raw materials requirements.