论文部分内容阅读
1 引言第四届全国抗辐射电子学学术会议于1991年3月上旬在西安临潼召开。来自机电部、航空航天部、中国工程物理研究院、中科院及部分高等院校等28个单位90多位专家参加了学术论文报告会。物理学家赖祖武教授主持这次学术会议,著名核物理学家程开甲、俞大光出席会议并作了重要讲话。会议开始,赖祖武教授作了“抗辐射电子学十年回顾”的报告。抗辐射专家组乔登江、王长河等专家分别作了“电子元器件抗辐射加固研究进展”及“新型半导体器件抗辐射性能剖析”等特邀报告。学术报告会共分为三个分会场进行,主要内容包括
1 Introduction The Fourth National Conference on Radiation Electronics was held in Lintong, Xi'an in early March 1991. More than 90 experts from 28 departments including Mechanical and Electrical Department, Aerospace Department, China Academy of Engineering Physics, Chinese Academy of Sciences and some institutions of higher learning attended the academic paper presentation. Physicist Professor Lai Zuwu presided over the conference. Famous nuclear physicists Cheng Kaijia and Yu Daguang attended the meeting and made important speeches. The meeting began, Professor Lai Zuwu made “a decade review of anti-radiation electronics,” the report. Radiation Expert Group Qiao Dengjiang, Wang Changhe and other experts made a “progress of research on anti-radiation reinforcement of electronic components” and “Analysis of new semiconductor devices anti-radiation properties,” and other special reports. The academic report is divided into three sub-venues, the main contents include