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用高分辨电子能量损失谱(HREELS)结合XPS研究了硫钝化的GaAs(100)面.HREELS的结果与XPS一致,证明钝化后GaAs(100)面的自然氧化物被完全除去,样品表面形成了一层主要由As-S键构成的钝化层.钝化样品表面的沾污主要是H_2O与碳氢化合物.在钝化前增加样品在浓HC1中浸泡的处理,能使沾污物在真空退火后被彻底除去.
The sulfur-passivated GaAs (100) surface was studied by high-resolution electron energy loss spectroscopy (HREELS) combined with XPS.The results of HREELS were consistent with those of XPS, which showed that the native oxide of GaAs (100) surface was completely removed after passivation, Forming a passivation layer mainly composed of As-S bonds.The passivation sample surface contamination is mainly H_2O and hydrocarbons.Improvement of the sample immersed in HC1 before passivation treatment, can make the contaminants After vacuum annealing is completely removed.