论文部分内容阅读
本文研究了硅中离子注入层的红外瞬态退火,证实了它与常规热退火具有相同的再结晶机理——固相外延再结晶过程.对于注As~+和注B~+样品的测试表明,红外瞬态退火具有电激活率高、缺陷消除彻底和注入杂质再分布小等优点.为了研究退火后残留深能级缺陷的电特性,对于离子注入MOS结构进行了DLTS测试.对于通过920A SiO_2膜,注入剂量为 1×10~(12)cm~(-2)B~+、能量为60 keV的样品,经常规热退火和红外瞬态退火后分别测到了深能级 E_T-E_v=0.24±0.02eV和E_r-E_v=0.29±0.02eV;并对引入这些深能级的缺陷进行了讨论.
In this paper, the infrared transient annealing of the ion implanted layer in silicon is investigated, which confirms that it has the same recrystallization mechanism as the conventional thermal annealing - the solid phase epitaxy recrystallization process. , The infrared transient annealing has the advantages of high electrical activation rate, complete defect elimination and small redistribution of implanted impurities.In order to study the electrical properties of the deep level defects after annealing, the DLTS test was performed on the ion-implanted MOS structure. For 920A SiO_2 Film with a dose of 1 × 10 ~ (12) cm ~ (-2) B ~ + and an energy of 60 keV, the deep level E_T-E_v = 0.24 was measured after the conventional thermal annealing and the infrared transient annealing ± 0.02eV and E_r-E_v = 0.29 ± 0.02eV; and defects introduced into these deep levels are discussed.