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本文叙述了最新技术水平的毫米波低噪声器件的设计和研制,每种器件都以高电子迁移率晶体管技术为基础,它们都适用于集成化毫米波接收机。这些器件包括40、60和70千兆赫放大器、有源的45千兆赫混频器及介质谐振器稳频振荡器。36到40千兆赫三级放大器的增益达15～17分贝,噪声系数为1.0～4.6分贝。56～62千兆赫放大器有4.5～6.5分贝的增益,在57.5千兆赫测得噪声系数为6.0分贝。70千兆赫放大器有4～5分贝的增益,在71千兆赫测得的噪声系数为7.8分贝。振荡器在20℃～70℃范围内稳定度为17PPm/℃,并具有0dB_m 的输出功率。混频器的增益已达到1,含中放噪声在内的单边带噪声系数为7～8分贝,输出交调截点为2dB_m。为了将来的设计,己最新水平毫研制出几种能在高达40千兆赫范围内表征 HEMT 器件增益和噪声特性的模型。这是设计米波器件的崭新方法。
This article describes the design and development of state-of-the-art millimeter-wave low-noise devices, each based on high-electron-mobility transistor technology and suitable for integrated millimeter-wave receivers. These devices include 40, 60 and 70 GHz amplifiers, active 45 GHz mixers and dielectric resonator frequency-stabilized oscillators. The gain of 36- to 40-gigahertz tertiary amplifiers amounts to 15 to 17 dB with a noise figure of 1.0 to 4.6 dB. The 56- to 62-gigahertz amplifier has a gain of 4.5 to 6.5 dB and a noise figure of 6.0 dB at 57.5 GHz. The 70 GHz amplifier has a gain of 4 to 5 dB and a noise figure of 7.8 dB at 71 GHz. Oscillator stability in the range of 20 ℃ ~ 70 ℃ 17PPm / ℃, and has 0dB_m output power. The gain of the mixer has reached 1, and the unilateral noise figure with intermediate noise is 7 ~ 8 dB, the output intercept point is 2dB_m. For future designs, several models have been developed to characterize the gain and noise characteristics of HEMT devices up to 40 gigahertz. This is a brand new way to design the meter wave device.