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An AlGaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of (102) and (002) X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN wells, the full width at half maximum of the (102) rocking curves decreases, while that of the (002) rocking curves increases. A significant increase of the full width at the half maximum of the (002) rocking curves when the doping concentration reaches 2.5 × 1019 cm-3 indicates the substantial increase of the inclined threading dislocation. High level doping in the AlGaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it.
An AlGaN / GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of (002) and (002) X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN a significant increase of the full width at the half maximum of the (002) rocking curves when the doping concentration (a2) reaches 2.5 × 1019 cm-3 indicates a substantial increase of the inclined threading dislocation. High level doping in the AlGaN / GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it.