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在低温到室温(T=233,253,273,283,300K)范围内以及强表面电场作用下,测量了硅VV—MOSFET的电学参量(非饱和区电导g,跨导g_m,饱和区漏电压V_(DS),漏电流I_(DS)和跨导g_(ms),发现和以往传统的理论结果有很大差异。考虑到晶格振动和强表面电场对载流子迁移率μ的影响,给出了VV—MOSFET的上述电学参量随有效栅压V_(GE)和温度T变化的函数关系。克服了传统公式只适应于弱表面电场和室温的局限性,得到的理论结果与实验吻合较好。
The electrical parameters of the silicon VV-MOSFET (g, m, saturation voltage V DS, leakage current in non-saturation region) were measured at low temperature to room temperature (T = 233,253,273,283,300 K) (DS) and transconductance (gms), we find that there is a great difference from the traditional theoretical results.According to the influence of lattice vibration and strong surface electric field on the mobility μ of the carrier, the influence of VV-MOSFET The above-mentioned electrical parameters as a function of effective gate voltage V_ (GE) and temperature T overcomes the limitations of the traditional equations that only adapt to the weak surface electric field and room temperature, and the theoretical results obtained are in good agreement with the experimental results.