论文部分内容阅读
本文研究了一些硫属化合物非晶半导体薄膜的表面电阻随热处理温度的变化。有些薄膜加热到一定温度时表面电阻发生突降。一般降低4个数量级左右。表面电阻是否发生突降以及发生突降的温度随薄膜成分和制备方式不同而变。X射线衍射和透射电镜分析结果表明。薄膜在表面电阻突降温度发生了非晶态的相转变。此时温度称为相变温度。发生相变前后薄膜的反射率也发生较大变化。说明这些薄膜材料可作为光存储介质使用。
In this paper, the surface resistance of some chalcogenide amorphous semiconductor films with the heat treatment temperature changes. Some films heated to a certain temperature surface resistance sudden drop. Generally lower by 4 orders of magnitude. Whether the surface resistance abruptly drops and the temperature at which the dip occurs depends on the film composition and the preparation method. X-ray diffraction and transmission electron microscopy analysis results show. The amorphous phase transition occurred at the sudden drop of surface resistance. At this point the temperature is called the phase transition temperature. Before and after the occurrence of phase change the reflectance of the film also changes greatly. These thin film materials can be used as optical storage media.