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A novel super-junction lateral double-diffused metal-oxide semiconductor(SJ-LDMOS) with a partial lightly doped P pillar(PD) is proposed.Firstly,the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect.Secondly,the new electric field peak produced by the P/P-junction modulates the surface electric field distribution.Both of these result in a high breakdown voltage(BV).In addition,due to the same conduction paths,the specific on-resistance(R on,sp) of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS.Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20V/μm at a 15μm drift length,resulting in a BV of 300V.
A novel super-junction lateral double-diffused metal-oxide semiconductor (SJ-LDMOS) with a partially lightly doped P pillar (PD) is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate- assisted depletion effect. Secondarily, the new electric field peak produced by the P / P-junction modulates the surface electric field distribution. Both of these results in a high breakdown voltage (BV) .In addition, due to the same conduction paths, the specific on-resistance (R on, sp) of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ- LDMOS reaches 20 V / μm at a 15 μm drift length, resulting in a BV of 300V.