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第十八届国际固体器件和材料会议于1986年8月20日至22日在日本东京召开.参加本届会议的代表近千名,他们分别来自二十多个国家.会议收到论文174篇,最新消息35篇,其中特邀报告23篇.论文内容包括:光刻,Si和GaAs外延工艺,MOS器件及工艺,Si上生长GaAs,异质结器件,高速GaAs集成电路,绝缘栅和热电子等26个专题.这些论文分别在东京Price Hotel的四个会场进行宣读和讨论.我国有5篇(其中台湾省2篇)论文,我所朱恩均同志也作了报告.这些论文的内容反映了国际微波器件和材料在小型器件、异质结、光器件、低温操作和半导体材料工艺上又有了重大的进展.现分两个方面进行介绍.
The 18th International Conference on Solid-State Devices and Materials was held in Tokyo, Japan from August 20 to August 22, 1986. Nearly 1,000 delegates attended the conference, from over 20 countries. The conference received 174 papers , The latest news 35 articles, including 23 invited reports.This paper includes: lithography, Si and GaAs epitaxy process, MOS devices and processes, the growth of Si on Si, heterojunction devices, high-speed GaAs integrated circuits, insulated gate and heat Electronic, etc. These papers were read and discussed in four venues of Price Hotel in Tokyo respectively.5 There are 5 articles in our country (including 2 in Taiwan Province), and Comrade Zhu En-jen made a report on the contents of these articles International microwave devices and materials have made significant progress in the field of small devices, heterojunction, optical devices, low temperature operation and semiconductor material processing.