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利用甲醇做氧源,采用金属有机物化学气相沉积(MOCVD)工艺在硅(111)衬底上生长了一系列的氧化锌薄膜,生长温度为400～600℃。薄膜的表面形貌及晶体质量分别利用场发射扫描电镜及X射线衍射仪进行了测量。研究表明:随着生长温度的降低,在X射线衍射图谱中氧化锌(101)峰取代了(002)峰成为了主峰。这可能是由于温度过低使得甲醇未完全分解,而甲醇分子抑制了氧化锌沿c轴极性过快的生长所致。室温光致发光光谱结果表明在较高生长温度下获得的样品具有良好的光学性质,发光强度随着温度的降低而降低。
A series of zinc oxide thin films were grown on silicon (111) substrate by metalorganic chemical vapor deposition (MOCVD) using methanol as oxygen source. The growth temperature was 400-600 ℃. The surface morphology and crystal quality of the films were measured by field emission scanning electron microscopy and X-ray diffraction. The results show that with the decrease of the growth temperature, the (002) peak is replaced by the zinc oxide (101) peak in the X-ray diffraction pattern. This may be due to the fact that the methanol is not completely decomposed due to the temperature being too low, while the methanol molecule inhibits the zinc oxide from growing too fast along the c-axis. Room temperature photoluminescence spectroscopy results show that the samples obtained at higher growth temperatures have good optical properties and the luminescence intensity decreases with decreasing temperature.