自从1955年荷兰菲利蒲研究室莱利(Lely)用升华法在试验室第一次成功的生长出纯净的碳化硅晶体后,碳化硅材料便引起了人们的广泛注意,成为一种新型的半导体材料。由于用碳化硅材料制成的器件在某些方面特别是耐高温和耐辐照方面具有硅、锗无法比拟的优点,例如当飞机的速度是音速的三倍时,座仓的温 Since the first successful growth of pure silicon carbide crystals by the French submarine Lely in 1955 in the Netherlands by laboratories, the silicon carbide materials have drawn much attention and become a new type Semiconductor material. Since devices made of silicon carbide have silicon and germanium incomparable advantages in some respects, especially high temperature and radiation resistance, for example when the speed of the aircraft is three times the speed of sound, the temperature of the silo