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目的探讨长期头低位卧床对人体自由行走时步态特性的影响。方法 8名健康成年男性志愿者进行-6°头低位45 d卧床实验。卧床前第6天(R-6),卧床后第1天(R+1)及第10天(R+10)进行自由无约束行走步态测试。使用高速摄像系统对行走过程中的步态时相参数进行分析,使用三维力台和应力板进行足底作用力的测试,同时对行走时的股直肌、腓肠肌内侧头、外侧头的肌电信号进行采集。结果头低位卧床45 d可导致步长和步速的显著降低,以及步态周期和接触时间的明显增加(P<0.05)。足底受力的结果表明,45 d的前后方向上的作用力明显减少(P<0.05),但垂直和左右方向上的作用力并未受到影响(P>0.05),足底冲量和加载速度均有显著的增加(P<0.05),除前后方向作用力外,其它指标在卧床后第10天仍未恢复正常。肌电结果显示45 d的头低位卧床后,中位功率频率有明显的降低(P<0.05),但在R+10恢复。结论 45 d头低位卧床可导致人体步态特性发生显著改变,R+10 d后亦不能完全恢复。
Objective To investigate the effect of long-term head-low bed rest on the gait characteristics of the human body when walking freely. Methods Eight healthy adult male volunteers were subjected to a bed rest test of -6 ° head-down 45 days. Free and unconstrained walking gait test was performed on the 6th day before bedtime (R-6), the first day (bedtime) and the tenth day (R + 10) after bedridden. The high-speed camera system was used to analyze the gait phase parameters in the walking process. The force test of the plantar floor was carried out by using the three-dimensional force table and the stress plate. At the same time, the myoelectricity of the rectus femoris, medial gastrocnemius and lateral head Signal acquisition. Results The first 45 days of bedridden ambulation resulted in a significant decrease of the pace and pace, as well as a significant increase of gait cycle and contact time (P <0.05). The results of plantar stress showed that the forces in the anterior-posterior direction of 45 d decreased significantly (P <0.05), but the forces in the vertical and lateral directions were not affected (P> 0.05). The plantar impulse and loading speed (P <0.05). Except for the force in the anteroposterior direction, the other indexes did not return to normal on the 10th day after bed rest. EMG results showed that after 45 days of head-lying bed rest, the median power frequency was significantly reduced (P <0.05), but recovered at R + 10. CONCLUSION: The 45-bed low lying bed can lead to significant changes in the gait characteristics of the human body and can not be completely recovered after R + 10 d.