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本文首先通过不同工艺规范下锑隐埋层对隔离结、纵向PNP与NPN管特性及制作成品率影响的实验观察证明在双极IC制作中存在锑隐埋层显著的非均匀远距离的自掺杂干扰作用;最后由隐埋层非均匀远距掺杂的作用机理说明要在确保低隐埋层薄层电阻下抑制其自掺杂作用的两条基本途经是降低锑隐埋层掺杂的表面浓度和提高外延生长前赶气排杂的效能,并通过实验进行初步的验证。
In this paper, the experimental observations of the characteristics of the isolation junctions, longitudinal PNP and NPN tubes and the yield of finished products under the different process specifications of the antimony buried layer prove that there is a significant non-uniform long-distance self- Miscellaneous interference; Finally, the mechanism of non-uniform long-distance doping by buried layer indicates that the two basic ways of inhibiting self-doping should be to reduce the doping of antimony Surface concentration and improve the efficiency of the gas and gas exclusion before epitaxial growth, and the preliminary verification by experiments.