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本文采用阴极电淀积法在镀Ni黄铜衬底上制备CdSe_xTe_(1-x)多晶半导体薄脱。用X射线衍射仪和X射线能谱分析仪,对淀积物的相结构和成分作了分析和测定。由此可肯定淀积物具有立方闪锌矿结构,它实际上是由结构相同的CdSe和CdTe组成的两相混合物。同时也指出在淀积层中还含有相当数量的游离镉金属。
In this paper, cathodes electrodeposited CdSe_xTe_ (1-x) polycrystalline semiconductor thin films on Ni-plated brass substrate. The phase structure and composition of the deposit were analyzed and determined by X-ray diffraction and X-ray energy spectrum analyzer. It is therefore confirmed that the deposit has a cubic sphalerite structure which is actually a two-phase mixture of CdSe and CdTe having the same structure. It is also pointed out that a significant amount of free cadmium metal is also contained in the deposit.