论文部分内容阅读
提出了一种用于提高硅基螺旋电感性能的局部介质增厚技术.这种技术通过淀积、光刻和湿法腐蚀工艺,局部增加电感下方的氧化层厚度,以降低衬底损耗和提高电感性能.所采用的结构及工艺简单、成本低廉,与CMOS工艺兼容良好.用这种技术制作的几种不同电感量的方形螺旋电感、品质因数和自谐振频率均显著提高.10nH,5nH和2nH的电感,品质因数的峰值分别提高了46. 7%,49. 7%和68 .6%;而自谐振频率的改善更明显,分别达到了92. 1%,91 0.%及不低于68 .1%.
A local dielectric thickening technique for improving the performance of silicon-based spiral inductors is proposed, which locally increases the thickness of the oxide under the inductor by deposition, photolithography and wet etching processes to reduce substrate loss and increase Inductance performance. The structure and process used is simple, low cost and good compatibility with the CMOS process. Several square spiral inductors with different inductance produced by this technique have significantly improved quality factor and self-resonance frequency. 10nH, 5nH and 1%, 91 .0% 和 不 低 The inductance of 2nH, the peak value of the quality factor increased by 46.7%, 49.7% and 68.6% respectively; while the improvement of self-resonance frequency was more obvious At 68.1%.