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自从能够生产超结的SiO_2介质膜,并解决了固定纳离子的问题以来,MOS器件得到飞速的发展。制成了大规模的、高性能的集成电路,并广泛的应用到各个领域中去。随着应用的推广,器件的工作环境愈来愈复杂,环境的恶劣使SiO_2栅介质发生退化,不能满足需要。人们开始着手寻找其它新的介质模,以能防止离子的迁移和电离辐射的影响。已制成的AI_2O_3膜在这方面得到重视。
MOS devices have been rapidly evolving since they have been able to produce super-junction SiO 2 dielectric films and solve the problem of fixing nanorods. Made a large-scale, high-performance integrated circuits, and widely used in various fields. With the popularization of the application, the working environment of the device is more and more complicated, and the environment is bad so that the SiO2 gate dielectric degenerates and can not meet the needs. People started looking for other new die to prevent ion migration and ionizing radiation. Has been made AI_2O_3 film attention in this regard.