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根据 Rohm&Haas 电子材料和道康宁达成的新合作协议,双方将致力于亚65纳米节点闪存、DRAM 和逻辑集成电路器件旋涂硅硬掩膜抗反射涂层新产品的研发。两年前,双方就已经开始了这种合作,并生产出了商用的旋涂硬掩膜材料。结合了道康宁的高硅含量的树脂材料和罗门哈斯硬掩膜抗反射涂层产品的硅硬掩膜产品不仅能帮助将图形精确地转移到衬底,也能缩短 IC工艺时间。
Under the new cooperation agreement between Rohm & Haas Electronic Materials and Dow Corning, the two companies will work on the development of new spin-on silicon hard mask anti-reflective coatings for sub-65-nm node flash, DRAM and logic integrated circuit devices. Two years ago, the two sides have already started this cooperation and produced a commercially available spin-on hardmask material. Dow Corning’s silicon-rich resin materials and silicon hard mask products from Rohm and Haas hardmask anti-reflective coating products not only help to transfer the pattern accurately to the substrate, but also shorten the IC process time.