日本富士通公司在世界上首次利用光外延技术试制LSI获得成功.光外延技术采用热与紫外光照射并用,在比老方法低400℃的低温条件下生长Si薄膜晶体.因为温度很低,衬底几乎不受损伤,所以晶体中很少产生缺陷,使之可用于微细加工.采用这项新技术生长Si薄膜时,以乙硅烷作Si源,乙硅烷气体在吸收汞灯紫外线后产生 Japan’s Fujitsu Limited is the first company in the world to successfully manufacture LSI by optical epitaxy, which uses a combination of heat and ultraviolet light to grow Si thin-film crystals at low temperatures, 400 ° C lower than the old method, because of the low temperature, Almost no damage, so few defects in the crystal, so that it can be used for microfabrication.With this new technology to grow Si film, the disilane as a Si source, disilane gas generated in the absorption of mercury lamp UV