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本文研究了薄层硅烷同步外延与SiH_4浓度、外延温度及时间分配诸方面的关系.给出了最佳工艺范围.
In this paper, the relationship between the epitaxial Si thin films and SiH 4 concentration, epitaxy temperature and time distribution is studied, and the optimum technological range is given.