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在电阻率为 0 .2Ω·cm的 p -Si衬底上沉积了厚度为 2 0nm的有机半导体材料 艹北 四甲酸二酐 (PTCDA)薄膜 ,由此形成有机 /无机异质结。从它们的能带结构出发 ,通过实验测试分析了这种有机 /无机半导体异质结 (OIHJ)的电容 -电压及电流 -电压特性。
An organic / inorganic heterojunction was formed on a p-Si substrate with a resistivity of 0.2 Ω · cm by deposition of a tetraphenyl tetracarboxylic dianhydride (PTCDA) thin film with a thickness of 20 nm. Based on their band structures, the capacitance-voltage and current-voltage characteristics of the organic / inorganic semiconductor heterojunction (OIHJ) were analyzed experimentally.