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本文利用比较符合实际的MESFET器件物理模型,采用集总元件匹配网络设计了单级和双级的x波段单片功率放大器。单级放大器中心频率为10.0GHz,带宽1.3GHz,线性输出功率126mW时,增益为5.2dB。双级放大器中心频率为9.4GHz,带宽0.8GHz,输出功率P_0≥1 00mW,增益G_p≥7dB,带内增益平坦度⊿G_p≤±0.5dB。较好的样品在9.6GHz下输出功率P_0≥250mW,G_p为9.4dB。
In this paper, a single-stage and two-stage x-band monolithic power amplifier is designed by using the lumped element matching network by using the more realistic MESFET device physical model. Single-stage amplifier center frequency of 10.0GHz, bandwidth 1.3GHz, linear output power of 126mW, the gain of 5.2dB. Two-stage amplifier center frequency of 9.4GHz, bandwidth 0.8GHz, output power P_0 ≥ 100mW, gain G_p ≥ 7dB, in-band gain flatness ⊿ G_p ≤ ± 0.5dB. The better sample output power P_0 ≥ 250mW at 9.6GHz, G_p of 9.4dB.