针对较常用的ＩｎＧａＡｓ（Ｐ）分别限制应变单量子阱激光器，给出了为得到最大净增益的优化设计参数。对于激射波长为１．５５μｍ的无应变激光器，最佳的光限制层波长为１．２４μｍ，厚度为１００ｎｍ。当阱材料引入压缩应变后．由于价带的有效状态密度减小，量子阱激光器的微分增益变大，阱深的增大对增大线性增益的效果更加明显．所以最佳光限制层的波长将变短，为１．２０μｍ For the more common InGaAs (P) confined strain-gauge single quantum well lasers, the optimal design parameters for maximum net gain are given. For a strain-free laser with a lasing wavelength of 1.55 μm, the optimum optical confinement layer has a wavelength of 1.24 μm and a thickness of 100 nm. After the well material is introduced into the compressive strain. Due to the decrease of the effective state density of the valence band, the differential gain of the quantum well laser becomes larger, and the effect of increasing the depth of the well becomes more obvious for increasing the linear gain. Therefore, the wavelength of the optimum light confining layer will be shorter, which is 1.20 μm