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选取Al0.3Ga0.7As/GaAs的非对称双量子阱结构,在有效质量近似条件下计入电子-电子相互作用所产生的Hartree势,采用转移矩阵方法研究了外加强激光场和电场作用下非对称双量子阱结构中子带间的跃迁和光吸收性质,并且详细讨论了外场对跃迁和吸收的影响。结果发现,通过调节高频激光场和电场强度,非对称双量子阱中子带间的吸收峰将发生蓝移或红移,并且吸收峰峰值也随之发生改变,高频激光场和电场对器件的光学和电学性质具有重要的影响,对电子态的进一步调控具有重要的意义。
The asymmetric double-quantum-well structure of Al0.3Ga0.7As / GaAs was chosen and the Hartree potential generated by the electron-electron interaction was taken into account under the approximation of the effective mass. The transfer matrix method was used to study the influence of external laser field and electric field The transition and absorption properties of the neutron band in a symmetric double-quantum-well structure are discussed in detail, and the effect of the external field on the transition and absorption is discussed in detail. The results show that by adjusting the high-frequency laser field and electric field strength, asymmetric double-quantum well neutron band absorption band will occur blue-shift or red-shift, and the peak absorption peak also will change, high-frequency laser field and electric field The optical and electrical properties of the device have an important influence on the electronic state regulation is of great significance.