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本文制备了一系列基于平面异质结和体异质结的激基复合物发光二极管,在20–300 K温度范围内测量了器件电致发光的磁效应(Magneto-Electroluminescence,MEL).实验发现:在温度较高时,两种不同的异质结器件的MEL呈现出相同的变化趋势,而在低温下(<100 K)却表现出截然不同的变化规律.即:在体异质结器件中,器件的MEL曲线始终未呈现出高场下降的现象;而在平面异质结器件中,当温度降为100 K时,其MEL曲线开始出现高场下降的现象,且温度越低,外加偏压越大,下降越明显.本文通过对两类器件的结构和能级排布分析,得出:平面异质结附近容易聚集大量的三重态激基复合物,从而易发生三重态的湮灭过程,在外加磁场下MEL表现出高场下降;而对于体异质结器件,由于形成的三重态激基复合物浓度较小,故难以发生三重态的湮灭过程.本文通过对激基复合物器件发光磁效应的研究,进一步丰富了激基复合物器件中激发态演化的微观机制,并对提高其发光效率也有一定的指导意义.
In this paper, a series of excimer-based light-emitting diodes based on planar heterojunction and bulk heterojunction have been fabricated and the electroluminescence (MEL) of devices has been measured in the temperature range of 20-300 K. : The MEL of two different heterojunction devices showed the same trend at high temperature, but showed quite different changes at low temperature (<100 K), ie, the body heterojunction device , The MEL curve of the device has not shown the phenomenon of high field decrease all the time. In the planar heterojunction device, when the temperature drops to 100 K, the MEL curve begins to appear the phenomenon of high field drop, and the lower the temperature, The larger the bias voltage, the more obvious the descending.Through the analysis of the structure and energy levels of the two types of devices, it is concluded that a large number of triplet exciplexes are easy to accumulate near the planar heterojunction so that triplet annihilation , The MEL shows a high field decrease under the applied magnetic field, and for the bulk heterojunction device, the triplet state annihilation process is hard to occur due to the small concentration of the triplet excited exciplex formed.In this paper, Device luminous magnetic effect of research, into one Enriched micro-mechanism exciplex evolution excited state devices, and improve the emission efficiency also have some significance.