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在单晶硅衬底上淀积掺硼(或磷)的μC—Si:H 薄膜可制成 C—Si/GDμC—Si:H 异质结。掺杂μC—Si:H 薄膜是由辉光放电制备,它的电导率约 1000S/m 光学带隙是1.6eV,淀积温度是280℃。该结具有好的 I—V 特性曲线,可以用整流扩散理论解释它。反向击穿电压取决于晶态衬底的电阻率。退火实验指出,在650℃以下,该结的 I—V 特性是稳定的。讨论了异质结的有关性质。
C-Si / GDμC-Si: H heterojunction can be made by depositing a boron-doped (or phosphorous) μC-Si: H thin film on a monocrystalline silicon substrate. The doped μC-Si: H thin film was prepared by glow discharge with an electrical conductivity of about 1000 S / m, an optical band gap of 1.6 eV and a deposition temperature of 280 ° C. The junction has a good I-V characteristic curve, which can be explained by the theory of rectifier and diffusion. The reverse breakdown voltage depends on the resistivity of the crystalline substrate. Annealing experiments indicate that the I-V characteristics of the junction are stable below 650 ° C. The relevant properties of heterojunctions are discussed.