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利用宽禁带发射极高注入效率的异质结双极晶体管(HBT),可同时提高基区掺杂、降低发射区掺杂,从而降低基区电阻和基极-发射极结电容。由于HBT在高频高速运用中具有极大潜力,使HBT的研究成为国际上的一个活跃课题。该器件要求精确控制极薄的多层外延结构材料的组分和掺杂浓度、以及精细的器件横向尺寸,从而在工艺上具有相当的难度。机电部十三所于1988年十月在国内首次使用MOCVD生长的GaAlAs/GaAs异质结多层结构材料,成功地研制出HBT。其材料结构为:衬底:N~+-GaAs;
Using a wide bandgap emitter and a high-efficiency HBT, the doping of the base region can be improved and the doping of the emitter region can be reduced at the same time, thereby reducing the base resistance and the base-emitter junction capacitance. Due to the great potential of HBT in high-frequency high-speed operation, the research of HBT has become an active topic in the world. The device requires considerable control over the composition and doping concentration of extremely thin, multilayered epitaxial structural materials, as well as the fine lateral dimensions of the device, making it technically challenging. Electromechanical Department thirteen in October 1988 for the first time in China using MOCVD grown GaAlAs / GaAs heterojunction multilayer structure materials, the successful development of HBT. The material structure is: Substrate: N ~ + -GaAs;