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本文介绍0．7μm线分步重复投影光刻曝光系统的技术指标、系统设计、研制中解决的关键单元技术和研制结果。结果表明工作波长365nm，缩少倍率5倍．曝光视场15mm×15mm．光刻工作分辨力0．6μm，并具有双路暗场同轴对准．又能精确分步投影光刻的曝光系统已研制成功。
This article describes the 0.7μm line stepper projection lithography exposure system of technical indicators, system design, development of key units to solve the technology and research results. The results show that the working wavelength of 365nm, reducing the magnification of 5 times. Exposure field of view 15mm × 15mm. Resolution resolution of 0.6μm lithography, and with dual dark field coaxial alignment. But also accurate step by step projection lithography exposure system has been successfully developed.