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我国科学家在Ｉｎ（Ｇａ）Ａｓ自组织量子点激光器研究中获得突破。目前已经获得室温下ＰＬ峰值在１．３μｍ的量子点材料，朝１．３μｍ激光器迈出了一大步。Ｉｎ（Ｇａ）Ａｓ／ＧａＡｓ量子点体系因其独特、优越的光电性质，成为替代目前ＩｎＰ基材料、制备光纤通讯用１、３?
Our scientists have made breakthroughs in the study of In (Ga) As self-organized quantum dot lasers. At present, a quantum dot material having a PL peak at room temperature of 1.3 μm has been obtained, and a big step toward a 1.3 μm laser has been made. In (Ga) As / GaAs quantum dot system has become an alternative to the current InP based materials because of its unique and superior optoelectronic properties.