论文部分内容阅读
针对中大规模红外焦平面对高速读出的需求,研究并设计了一款20MPixel/s红外焦平面高速读出电路。读出电路单元电路由电容负反馈运放输入级、相关双采样、源随输出级电路组成,总线输出级采用基于低功耗推挽运放的跟随器结构。研究了输出级运放像元信号建立时间和负载电容的关系,给出了20 MPixel/s高速读出的负载电容适用范围。采用0.5μm Mixed Signal CMOS工艺研制了一款红外焦平面高速读出电路芯片,和InGaAs光敏芯片耦合后实测读出速率达到20MPixel/s,像元信号之间最大上升时间为17ns。
Aimed at the demand of high-speed readout of large-scale infrared focal plane, a 20MPixel / s infrared focal plane high-speed readout circuit was researched and designed. The readout circuit unit circuit consists of a capacitive negative feedback operational amplifier input stage, a correlated double sampling, a source output stage circuit, and a bus output stage using a follower structure based on a low-power push-pull operational amplifier. The relationship between the settling time and the load capacitance of the output stage op amp is studied. The applicable range of load capacitances read out at high speed of 20 MPixel / s is given. An infrared focal plane high speed readout circuit chip was developed by using 0.5μm Mixed Signal CMOS process. The measured readout rate reached 20MPixel / s after being coupled with InGaAs photosensitive chip, and the maximum rise time between pixel signals was 17ns.