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研究了Zn掺杂InSb蒸镀薄膜杂质浓度和热处理条件对其电性能的影响。InSb薄膜采用三温度法在云母基片上制备,利用蒸镀Zn扩散后进行区熔再结晶的方法掺杂Zn杂质。在进行区熔再结晶时为了防止InSb分解和Sb的蒸发,用磁控溅射方法在InSb薄膜上生长厚度为300 nm的Si O2。测试结果表明最好的热处理条件为Ar气氛温度200℃、熔融区的移动速度1×10-5m·s~(-1)和熔融区通过数3。Zn成为受主,室温下测量Zn掺杂浓度为1.47×1022m-3的InSb薄膜的电子迁移率为5.65 m2·V-1·s~(-1)。Zn的掺杂浓度大于1.47×1022m-3时电子迁移率急剧减少,最大的霍尔常数为385 cm3·C-1。在1.5 T磁场下Zn掺杂浓度为3.16×1022m-3时,InSb薄膜电阻率的相对变化达到最大值为3.63,是未掺杂薄膜的2.46倍。
The effects of impurity concentration and heat treatment conditions on the electrical properties of Zn-doped InSb thin films were investigated. The InSb thin film is prepared on mica substrate by the three-temperature method, and the Zn impurity is doped by using the method of zone melting recrystallization after evaporating Zn diffusion. In order to prevent InSb decomposition and Sb evaporation during zone recrystallization, Si O2 was grown to a thickness of 300 nm on the InSb thin film by a magnetron sputtering method. The test results show that the best heat treatment conditions are the Ar atmosphere temperature of 200 ℃, the moving speed of the melting zone of 1 × 10-5m · s ~ (-1) and the melting zone number of passes (3). Zn was taken as acceptor. The electron mobility of InSb thin film with Zn doping concentration of 1.47 × 1022m-3 was 5.65 m2 · V-1 · s -1 at room temperature. When the doping concentration of Zn is more than 1.47 × 1022m-3, the electron mobility decreases sharply, and the maximum Hall constant is 385 cm3 · C-1. In 1.5 T magnetic field Zn doping concentration of 3.16 × 1022m-3, the InSb relative resistivity of the film reaches a maximum of 3.63, 2.46 times that of the undoped film.