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ＮＥＣ、日立在ＩＳＳＣＣ上发表１ＧＤＲＡＭ据ＩＳＳＣＣ’９５的发表内容，ＮＥＣ、日立已经在世界上率先开发了１ＧＤＲＡＭ。ＮＥＣ开发的１ＧＤＲＡＭ的特点是，采用０．２μｍ电子束曝光技术和钽氧化膜低温（５００℃）工艺技术以０．２５μｍＣＭＯＳ工艺，存贮单...
NEC, Hitachi Published 1GDRAM at ISSCC According to the publication of ISSCC’95, NEC and Hitachi have pioneered the development of 1GDRAM in the world. NEC developed 1GDRAM is characterized by the use of 0.2μm electron beam exposure technology and tantalum oxide film low temperature (500 ℃) process technology to 0.25μmCMOS process, ...