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利用金辅助金属有机化学气相沉淀法(MOCVD)在GaAs(111)B衬底上分别制备了InAs/GaAs和InAs/InxGa1-xAs/GaAs(0≤x≤1)纳米线异质结构.实验结果显示,直接生长在GaAs纳米线上的InAs纳米线生长方向杂乱或者沿着GaAs纳米线侧壁向衬底方向生长,生长的含有InxGa1-xAs组分渐变缓冲段的InAs/InxGa1-xAs/GaAs三段式纳米线异质结构在轴向上串接生长而形成双异质结构.通过插入三元化合物InxGa1-xAs渐变缓冲段可以有效的克服界面能差异和晶格失配带来的负面影响,提高纳米线的晶体质量和生长可控性.
InAs / GaAs and InAs / InxGa1-xAs / GaAs (0≤x≤1) nanowire heterostructures were fabricated on GaAs (111) B substrates by gold-assisted metalorganic chemical vapor deposition (MOCVD) Shows that InAs nanowires grown directly on GaAs nanowires grow in disorder or grow toward the substrate along the sidewalls of GaAs nanowires. InAs / InxGa1-xAs / GaAs tristimulus segments containing InxGa1-xAs The segmented nanowire heterostructures grow in tandem in the axial direction to form double heterostructures.The interfacial energy difference and lattice mismatch can be effectively overcome by inserting the gradual buffer segments of InxGa1-xAs ternary compounds, Improve the crystal quality and growth controllability of nanowires.