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本文对光触发晶闸管的两种不同光敏区结构进行了比较分析,对其中颇具吸引力的结构——有一薄n_E层的槽状光敏区结构,从理论和实验上进行了较为详细的研究,着重分析了不同参数条件下,n_B层厚度与触发灵敏度的关系.通过建立理论模型和进行数值模拟,得到了一些新的结果,表明对于一定的p_P基区参数和n_E层浓度,存在一最佳nE层厚度,在此厚度下,触发功率最小;而且采用此光敏区结构能得到触发灵敏度与dv/dt容量之间的较好折衷,?计算结果和实验吻合较好.
In this paper, two different photosensitive regions of photo-actuated thyristor are comparatively analyzed. The attractive structure of the photo-triggered thyristor, which has a thin n_E layer, is studied theoretically and experimentally in detail. The relationship between the n_B layer thickness and the trigger sensitivity under different parameters is analyzed. Some new results are obtained by establishing the theoretical model and performing numerical simulation. It shows that for a certain p_P base parameter and n_E layer concentration, there exists a best nE Layer thickness, at which the trigger power is minimized; and a better compromise between trigger sensitivity and dv / dt capacity is obtained using this photosensitive region structure. The calculated results agree well with the experimental results.