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本文对PD SOI NMOS器件进行了60Coγ射线总剂量辐照的实验测试,分析了不同的栅长对器件辐射效应的影响及其物理机理.研究结果表明,短沟道器件辐照后感生的界面态密度更大,使器件跨导出现退化.PD SOI器件的局部浮体效应是造成不同栅长器件辐照后输出特性变化不一致的主要原因.短沟道器件输出特性的击穿电压更低.在关态偏置条件下,由于背栅晶体管更严重的辐射效应,短沟道SOI器件的电离辐射效应比同样偏置条件下长沟道器件严重.
In this paper, PD SOI NMOS devices were experimentally tested with 60Co γ-ray total dose irradiation, and the influence of different gate lengths on the device radiation effects and their physical mechanism were analyzed.The results show that the induced interface of short-channel devices after irradiation The density of states is higher and the device degenerates transconductically.The local floating body effect of PD SOI device is the main reason for the inconsistent changes of the output characteristics after the radiation of different gate length devices.The breakdown voltage of short channel device output characteristics is lower Off-state bias conditions, ionization radiation effects of short-channel SOI devices are more severe than long-channel devices under the same bias conditions due to the more severe radiation effects of the back-gate transistors.