Four-inch high quality crack-free AIN layer grown on a high-temperature annealed AIN template by MOC

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In this work,based on physical vapor deposition and high-temperature annealing (HTA),the 4-inch crack-free high-quality AIN template is initialized.Benefiting from the crystal recrystallization during the HTA process,the FWHMs of X-ray rock-ing curves for (002) and (102) planes are encouragingly decreased to 62 and 282 arcsec,respectively.On such an AIN template,an ultra-thin AIN with a thickness of ~700 nm grown by MOCVD shows good quality,thus avoiding the epitaxial lateral over-growth (ELOG) process in which 3-4μm AIN is essential to obtain the flat surface and high crystalline quality.The 4-inch scaled wafer provides an avenue to match UVC-LED with the fabrication process of traditional GaN-based blue LED,therefore signific-antly improving yields and decreasing cost.
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