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德州仪器(TI)推出其NexFET产品线11款新型N沟道功率MOSFET,其中包括具有业界最低导通电阻并采用QFN封装的25-V CSD16570Q5B和30-V CSD17570Q5B,可应用于热插拔和ORing应用。此外,TI面向低电压电池供电型应用的新型12-V FemtoFET CSD13383F4在采用0.6mm×1mm纤巧型封装的情况下实现了比同类竞争器件低84%的极低电阻。CSD16570Q5B和CSD17570Q5B NexFET MOSFET可在较高电流条件下
Texas Instruments Introduces 11 New N-Channel Power MOSFETs in its NexFET Portfolio, Including 25-V CSD16570Q5B and 30-V CSD17570Q5B with Industry’s Lowest ON-Resistance in QFN Package for Use with Hot-Swap and ORing application. In addition, TI’s new 12-V FemtoFET CSD13383F4 for low-voltage battery-powered applications achieves a very low resistance of 84% lower than competing devices in a tiny 0.6mm × 1mm package. The CSD16570Q5B and CSD17570Q5B NexFET MOSFETs operate at higher current conditions